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A systems approach to ultra-fine pitch flip chip interconnect packaging.

机译:一种超细间距倒装芯片互连封装的系统方法。

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摘要

Flip Chip (FC) technology is a key enabler for high-density, high input-output (or I/0) applications and is one of the fastest growing segments in the semiconductor packaging industry.; The objective of this research was to explore the feasibility of packaging high-I/O, ultra-fine pitch reflow soldered flip chip devices of the future with a pitch of less than 150 mum. The applications addressed in this research include devices that typically utilize flip chip ball grid array (or FCBGA) packaging technology. The limits of the flip chip reflow solder technology have been explored in terms of interconnect feature sizes and the related assembly, functional, and electrical implications. The entirety of this research has been based upon a combination of experiments and the use of theoretical approaches. The impact of reducing the interconnect size on factors that affect the assembly yield was studied. The solder joint formation process was modeled and validated using an interactive program called 'Surface Evolver'. This program can be used to predict the shape of a liquid surface by evolving it toward the minimal energy using a 'gradient descent' method. The effects of reducing interconnect size on placement accuracy, solder bridging, and self-alignment were analyzed. The impact of using lead free solder was evaluated. A detailed analysis of parameters that control the assembly yield in the no-flow underfill process was also carried out.; The results indicate that solder bump geometry and package I/O count can have an impact on solder joint collapse. Solder bump volume does not strongly affect the extent of collapse and the self-alignment capability. On the other hand, in presence of a no-flow underfill, the self-alignment capability is expected to reduce with the solder bump volume. The self-alignment capability also strongly depends on the viscosity of the underfill.; Theoretically, the impact on the solder joint collapse due to the use of lead free solder was observed to diminish with reducing solder bump volume. The analysis of placement and fabrication tolerances revealed relatively strong reduction in the placement tolerance due to a small reduction in the solder bump size. The placement tolerance can be relieved by modifying the geometry of the coverlay opening.; A case of packaging a high I/O flip chip with minimum number of layers of circuitry has also been evaluated in this research. The electrical implications have been addressed, which include impedance, crosstalk, and transmission line analysis. In addition, the effect of reducing solder bump volume on the phenomenon of electromigration has been briefly studied.; In conclusion, this research highlights the system level design and assembly issues in ultra fine pitch reflow soldered flip chip packaging. The significance of this research is that the problem is addressed through multiple perspectives, which includes evaluation of the solder joint formation process, issues pertaining to the fabrication and assembly of the package, and impact on the electrical performance. (Abstract shortened by UMI.)
机译:倒装芯片(FC)技术是高密度,高输入输出(或I / 0)应用的关键推动力,并且是半导体封装行业中增长最快的细分市场之一。这项研究的目的是探讨封装未来小于150微米间距的高I / O超细间距回流焊倒装芯片器件的可行性。本研究中涉及的应用包括通常利用倒装芯片球栅阵列(或FCBGA)封装技术的设备。倒装芯片回流焊接技术的局限性已在互连特征尺寸以及相关的组装,功能和电气方面进行了探讨。整个研究都是基于实验和理论方法的组合。研究了减小互连尺寸对影响组装良率的因素的影响。使用称为“ Surface Evolver”的交互式程序对焊点形成过程进行了建模和验证。该程序可用于通过使用“梯度下降”方法使液体表面朝最小能量方向发展来预测液体表面的形状。分析了减小互连尺寸对放置精度,焊料桥接和自对准的影响。评估了使用无铅焊料的影响。还进行了详细的参数分析,这些参数控制着非流动式底部填充工艺中的装配成品率。结果表明,焊料凸点的几何形状和封装的I / O数量可对焊点塌陷产生影响。焊料凸点的体积不会严重影响塌陷程度和自对准能力。另一方面,在不流动的底部填充的情况下,自对准能力预计会随着焊料凸块的体积而降低。自对准能力也强烈取决于底部填充胶的粘度。从理论上讲,观察到由于使用无铅焊料而对焊点塌陷的影响随着焊料凸块体积的减小而减小。放置和制造公差的分析表明,由于焊料凸点尺寸的减小很小,所以放置公差的降低幅度相对较大。可以通过修改覆盖层开口的几何形状来减轻放置公差。这项研究还评估了用最少的电路层数封装高I / O倒装芯片的情况。已经解决了电气问题,包括阻抗,串扰和传输线分析。另外,已经简短地研究了减少焊料凸块的体积对电迁移现象的影响。总之,这项研究突出了超细间距回流焊倒装芯片封装中的系统级设计和组装问题。这项研究的意义在于,该问题是通过多种角度解决的,包括评估焊点形成过程,与封装的制造和组装有关的问题以及对电气性能的影响。 (摘要由UMI缩短。)

著录项

  • 作者单位

    State University of New York at Binghamton.;

  • 授予单位 State University of New York at Binghamton.;
  • 学科 Engineering System Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 198 p.
  • 总页数 198
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 系统科学;无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:42:37

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