AlGaN/GaN-on-Silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm² using a CMOS-compatible gold-free process

摘要

AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. Ron of 3 mΩ.cm² was obtained. Breakdown voltage VBR of 800 V was achieved, the highest for LGD below 10 µm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts.