High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

摘要

Improved characteristics of an AlGaN/GaN HFET are reported. In this paper, the authors introduce a new ohmic electrode of Ti/AlSi/Mo and a low refractive index $hbox{SiN}_{x}$ to decrease the contact resistance and gate leakage current. The AlGaN/GaN HEFT showed a low specific resistance of 6.3 $hbox{m}Omegacdothbox{cm}^{2}$ and a high breakdown voltage of 750 V. The switching characteristics of an AlGaN/GaN HFET are investigated. The small turn-on delay of 7.2 ns, which was one-tenth of Si MOSFETs, was measured. The switching operation of the HFET showed no significant degradation up to 225 $^{circ}hbox{C}$.