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Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage
Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage
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机译:GaN缓冲器中的掺杂和陷阱型材工程最大化AlGaN / GaN HEMT EPI堆栈击穿电压
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摘要
The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.
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机译:本发明提出了一组用于AlGaN / GaN HEMT装置中的GaN缓冲液的一组杂质掺杂构造,以改善装置的击穿特性。击穿特性取决于供体和受体陷阱的独特混合,并且使用碳作为掺杂剂增加供体和受体陷阱浓度,导致击穿电压改善和器件性能的折衷。提出了一种改进的硅和碳共掺杂,这使得能够对缓冲器中的供体和受体捕集浓度进行独立控制,从而可能改善了装置的击穿特性,而不会对装置性能产生不利影响。
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