Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

摘要

Group III-nitride semiconductors are promising materials for high-power microwave transistors. However, several materials issues remain to be solved. For example, conducting buffer or interfacial layers are a frequently observed problem in AlGaN/GaN HEMTs grown by both MOCVD and MBE. These conducting layers can cause poor pinch-off characteristics and poor inter-device isolation.