High-power AlGaN/GaN HFET with lower on-state resistance and higher switching time for an inverter circuit

摘要

An AlGaN/GaN HFET with a much lower on-state resistance is described and used in an inverter circuit. It was confirmed that the AlGaN/GaN HFET could be operated at a current of over 20 A using gas-source molecular-beam epitaxy. The on-state resistance of the HFET was measured at 8 mΩ cm2 at 370 V. Switching times were investigated; the turn-on time was found to be 10 ns and the turn-off time 11 ns. The maximum operating frequency of the AlGaN/GaN HFET was 0.37 GHz. An inverter circuit was fabricated using AlGaN/GaN HFETs to convert DC 30 V to AC 100 V.