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FORMING METHOD FOR PASSIVATION FILM AND MANUFACTURING METHOD FOR ALGAN/GAN HFET INCLUDING THE FORMING METHOD
FORMING METHOD FOR PASSIVATION FILM AND MANUFACTURING METHOD FOR ALGAN/GAN HFET INCLUDING THE FORMING METHOD
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机译:钝化膜的形成方法和Algan / GAN HFET的制造方法包括该形成方法
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摘要
The present invention relates to a method for forming a passivation film to improve an electrical property of a GaN system semiconductor device. The method for forming the passivation film comprises: a step of forming a primary passivation film on the surface; a step of forming an ohmic electrode which penetrates the primary passivation film; a step of eliminating the primary passivation film; a step of forming a GaOx sacrificial layer on the surface in which the first passivation film is eliminated and eliminating the GaOx sacrificial layer; and a step of forming a secondary passivation film on the surface in which the GaOx sacrificial layer is eliminated. The present invention improves the quality of a surface in which the secondary passivation film is in contact with the surface in which the first passivation film is eliminated by executing a process of forming the GaOx sacrificial layer on the surface in which the first passivation film is eliminated, and eliminating the GaOx sacrificial layer. An AlGaN/GaN HFET which is manufactured with a method including a passivation film forming method of the present invention has no current collapse phenomenon and shows an excellent performance in a high voltage and reduces a leakage current.
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机译:本发明涉及一种形成钝化膜以改善GaN系统半导体器件的电性能的方法。形成钝化膜的方法包括:在表面上形成初级钝化膜的步骤;形成穿透第一钝化膜的欧姆电极的步骤;去除初级钝化膜的步骤;在去除了第一钝化膜的表面上形成GaOx牺牲层并去除GaOx牺牲层的步骤;在去除了GaOx牺牲层的表面上形成第二钝化膜的步骤。本发明通过执行在去除了第一钝化膜的表面上形成GaOx牺牲层的工艺,提高了第二钝化膜与去除了第一钝化膜的表面接触的表面的质量。 ,并消除了GaOx牺牲层。用包括本发明的钝化膜形成方法的方法制造的AlGaN / GaN HFET没有电流崩塌现象,并且在高压下表现出优异的性能并且减小了漏电流。
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