首页> 外文会议>Symposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held April 4-9, 1999, San Francisco, California, U.S.A. >Field emission properties of thin molybdenum carbide and diamond films deposited by dielectrophoresis
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Field emission properties of thin molybdenum carbide and diamond films deposited by dielectrophoresis

机译:介电电泳沉积的碳化钼和金刚石薄膜的场发射特性

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MOlybdenum carbide and diamond films were deposited at room termperature by dielectrophoresis on molybdenum foil and field emission tips. FIlms deposited on flat surfaces were characterized with XPS, UPS and SEM. Field emission Fowler-Nordheim current-voltage characteristics and electron energy distribution measurements were obtained using films deposited on field emission tips as part of a single aperture gated diode in a VG ESCALAB II system. Molybdenum trioxide was present after molybdenum carbide deposition at room temperature on all samples. At a temperature of about 650 deg C, the dominant oxide changes to molybdenum dioxide. At about 800 deg C, the oxygen content of the films significantly decreases and molybdenum carbide with significant graphite content remains. The UPS data for these samples were obtained at different annealing temperatures and a number of photon energies to determine photoelectric work functions for molybdenum trioxide, molybdenum dioxide and molybdenum carbide. The sanme kind of data was obtained for diamond deposited on molybdenum and molybdenum carbide coated foils and field emission tips.
机译:通过介电电泳在室温下在钼箔和场发射尖端上沉积碳化钼和金刚石膜。用XPS,UPS和SEM对沉积在平坦表面上的薄膜进行了表征。场发射Fowler-Nordheim电流-电压特性和电子能量分布测量结果是通过使用沉积在场发射尖端上的薄膜作为VG ESCALAB II系统中单孔门控二极管的一部分获得的。室温下所有样品上的碳化钼沉积后都存在三氧化钼。在约650摄氏度的温度下,主要的氧化物变为二氧化钼。在约800℃下,膜中的氧含量显着降低,并且残留具有显着石墨含量的碳化钼。这些样品的UPS数据是在不同的退火温度和许多光子能量下获得的,以确定三氧化钼,二氧化钼和碳化钼的光电功函数。获得了沉积在钼和碳化钼涂层箔上的钻石以及场发射尖端的同类数据。

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