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Field emission properties of thin molybdenum carbide and diamond films deposited by dielectrophoresis

机译:介电泳沉积薄钼碳化物和金刚石薄膜的场发射性能

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Molybdenum carbide and diamond films were deposited at room temperature by dielectrophoresis on molybdenum foil and field emission tips. Films deposited on flat surfaces were characterized with XPS, UPS and SEM. Field emission Fowler-Nordheimcurrent-voltage characteristics and electron energy distribution measurements were obtained using films deposited on field emission tips as part of a single aperture gated diode in a VG ESCALAB II system. Molybdenum trioxide was present after molybdenumcarbide deposition at room temperature on all samples. At a temperature of about 650°C, the dominant oxide changes to molybdenum dioxide. At about 800°C, the oxygen content of the films significantly decreases and molybdenum carbide with significantgraphite content remains. The UPS data for these samples were obtained at different annealing temperatures and a number of photon energies to determine photoelectric work functions for molybdenum trioxide, molybdenum dioxide and molybdenum carbide. Thesame kind of data was obtained for diamond deposited on molybdenum and molybdenum carbide coated foils and field emission tips.
机译:通过钼箔和场发射尖端的介电电泳,在室温下沉积碳化碳化物和金刚石薄膜。沉积在平坦表面上的薄膜的特征在于XPS,UPS和SEM。使用沉积在场发射尖端上的薄膜作为单个孔径门二极管中的一部分,获得现场发射禽流币电压特性和电子能量分布测量。在所有样品上在室温下钼沉积后存在三氧化钼。在约650℃的温度下,优势氧化物变为二氧化钼。在约800℃下,薄膜的氧含量显着降低,碳化钼仍然存在。在不同的退火温度和许多光子能量下获得这些样品的UPS数据,以确定三氧化钼,二氧化钼和碳化钼的光电工作功能。为沉积在钼和碳化钼涂层箔和场发射提示上的金刚石获得了这些数据。

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