首页> 外国专利> The present invention relates to a method of manufacturing a diamond-like diamond thin film doped with nitrogen, a diamond-like diamond thin film and a field emission display device having the same

The present invention relates to a method of manufacturing a diamond-like diamond thin film doped with nitrogen, a diamond-like diamond thin film and a field emission display device having the same

机译:本发明涉及一种掺杂有氮的类金刚石薄膜的制造方法,类金刚石薄膜和具有该类薄膜的场发射显示装置

摘要

The present invention relates to a method for producing a nitrogen-doped pseudo diamond film. Pseudo-diamonds are chemically inert, hard, and particularly low in work function, and are expected to be used as current-emitting devices. However, a general doping method by the diffusion or doping method is not applicable to diamonds or quasi-diamonds, and other doping methods should be introduced. The present invention provides a method of doping nitrogen by adding nitrogen to a plasma during the deposition of a pseudo diamond thin film, and a method of doping nitrogen using an ion doping method.
机译:氮掺杂伪金刚石膜的制造方法技术领域本发明涉及一种氮掺杂伪金刚石膜的制造方法。伪金刚石是化学惰性的,坚硬的,并且功函特别低,并且有望用作电流发射器件。然而,通过扩散或掺杂方法的一般掺杂方法不适用于金刚石或准金刚石,并且应引入其他掺杂方法。本发明提供了一种在伪金刚石薄膜的沉积过程中通过将氮添加到等离子体中来掺杂氮的方法,以及一种使用离子掺杂法来掺杂氮的方法。

著录项

  • 公开/公告号KR19980065588A

    专利类型

  • 公开/公告日1998-10-15

    原文格式PDF

  • 申请/专利权人 장진;

    申请/专利号KR19970000663

  • 申请日1997-01-13

  • 分类号C30B25/00;

  • 国家 KR

  • 入库时间 2022-08-22 02:47:45

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