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The present invention relates to a method of manufacturing a diamond-like diamond thin film doped with nitrogen, a diamond-like diamond thin film and a field emission display device having the same
The present invention relates to a method of manufacturing a diamond-like diamond thin film doped with nitrogen, a diamond-like diamond thin film and a field emission display device having the same
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机译:本发明涉及一种掺杂有氮的类金刚石薄膜的制造方法,类金刚石薄膜和具有该类薄膜的场发射显示装置
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摘要
The present invention relates to a method for producing a nitrogen-doped pseudo diamond film. Pseudo-diamonds are chemically inert, hard, and particularly low in work function, and are expected to be used as current-emitting devices. However, a general doping method by the diffusion or doping method is not applicable to diamonds or quasi-diamonds, and other doping methods should be introduced. The present invention provides a method of doping nitrogen by adding nitrogen to a plasma during the deposition of a pseudo diamond thin film, and a method of doping nitrogen using an ion doping method.
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