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Method for producing a conducting doped diamond-like nanocomposite film and a conducting doped diamond-like nanocomposite film

机译:导电掺杂类金刚石纳米复合薄膜的制备方法

摘要

The present invention provides a method for producing a conducting doped diamond-like nanocomposite film containing, as basic elements, carbon, silicon, metal, oxygen and hydrogen. The film is produced as follows: a substrate is disposed in a vacuum chamber, and a voltage of 0.3-5.0 kV is applied to the substrate; a gas discharge plasma with an energy density of more than 5 kilowatt-hour/gram-atom of carbon particles is generated, and an organosiloxane compound is evaporated into the plasma; a beam of particles of a dopant is introduced into the plasma; and a film is grown on the substrate to produce a conducting doped carbon nanocomposite film with a predetermined relationship of atomic concentrations of carbon, metal and silicon. The film surface is coated with a silicon dioxide layer. A unidirectional alternating current is passed through the film in a current generator mode to effect electric thermal exposure of the film. As the result, a conducting doped diamond-like nanocomposite film having a multilayer structure is produced.
机译:本发明提供了一种制备导电掺杂的类金刚石纳米复合膜的方法,所述导电掺杂的类金刚石纳米复合膜包含碳,硅,金属,氧和氢作为基本元素。膜的制造如下:将基板配置在真空室内,对基板施加0.3〜5.0kV的电压。产生能量密度大于5千瓦时/克原子碳颗粒的气体放电等离子体,并将有机硅氧烷化合物蒸发到等离子体中。一束掺杂剂粒子被引入等离子体中。然后在基板上生长膜,以制备具有碳,金属和硅的原子浓度的预定关系的导电掺杂碳纳米复合膜。膜表面涂覆有二氧化硅层。单向交流电以电流发生器的方式流经薄膜,以实现薄膜的电热曝光。结果,产生了具有多层结构的导电掺杂的类金刚石纳米复合膜。

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