Device structure for field emission display using doped pseudo diamond and amorphous diamond thin film and method for manufacturing same

摘要

The present invention relates to a fabrication method and a structure in a tip application, which is a core element for FED, using a polycrystalline diamond or an amorphous diamond thin film formed by crystallizing a DLC thin film by a doped DLC thin film and a laser. DLC thin films are ideal for FED tip devices due to their high resistivity, chemical inertness, rigidity and low work function. DLC thin films can be grown at low temperatures and produced in large areas by various methods. Doped DLC thin films can be applied to simple diode type and gray type for FED tip application. The crystallization of the doped DLC thin film by excimer laser is more polycrystalline than the amorphous phase in the thin film, so that the driving voltage can be further lowered when applied to the tip of the FED. In addition, since the laser annealing is performed after doping using an ion shower device without a mass separation device, a large-area process is possible to increase productivity.