Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 W6lczynska Str., 01-991 Warsaw, Poland Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw,;
4H-SiC; 6H-SiC seed; open backside; crystal growth; PVT; hexagonal voids;
机译:PVT法生长在6H-SiC晶种上的高质量4H-SiC晶体的晶种极性的影响
机译:无微管4H-SiC在4H-SiC {0 3(3)上方8}晶种和高纯度半绝缘6H-SiC上的晶体生长
机译:6H-SiC块状单晶物理气相传输(PVT)生长过程中的位错演化和分布
机译:PVT法生长的6H-SiC单晶在不同源材料和开放或封闭种子背面的情况下的表征
机译:通过种子多晶转化生长铌酸铅镁-钛酸铅单晶。
机译:源材料的形态变化对4H-SiC单晶生长界面的影响
机译:通过CF-PVT法在4H-SiC上生长的体积<111> 3C-SiC单晶的表征
机译:碳化硅和碳化硅单晶CVD生长过程中缺陷成核的原位研究;最终的项目报告。 2007年1月至2008年4月