Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland lnstitute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, 133 Wolczyriska Str., 01-919 Warsaw, Poland lnstitute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 W;
n- or p-type 6H-SiC; PVT; open or closed seed backside; structural characterization; electrical properties;
机译:PVT法生长在6H-SiC晶种上的高质量4H-SiC晶体的晶种极性的影响
机译:PVT法生长6H-SiC块状单晶中缺陷形成的特殊性
机译:PVT法生长的6H-SiC单晶中失配域形成的影响因素
机译:用开放式种子背面通过PVT方法表征生长的钒掺杂4H-和6H-SiC
机译:PVT生长的4H-碳化硅单晶中扩展缺陷的演变。
机译:HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响
机译:通过CF-PVT法在4H-SiC上生长的体积<111> 3C-SiC单晶的表征
机译:热壁CVD外延生长横向生长6H-siC半平面晶种的结构表征。