METHOD OF MANUFACTURING SURFACE-MODIFIED SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SEMICONDUCTOR CHIP, SEED SUBSTRATE FOR SINGLE CRYSTAL SiC GROWTH, AND POLYCRYSTAL SiC SUBSTRATE WITH SINGLE CRYSTAL GROWTH LAYER

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase technology that can modify the top surface of the crystal polymorphism of an original single crystal SiC substrate into the 4H-SiC single crystal regardless of any shape of crystal polymorphism.;SOLUTION: A single crystal SiC substrate 5 the crystal polymorphism of which consists of any one of 3C, 4H or 6H is heated under a high-vacuum environment to form a carbonized layer 5a on the top surface of the single crystal SiC substrate. Subsequently, the single crystal SiC substrate is accommodated in a fitted vessel having a carbon getter effect, and with the inside of the fitted vessel kept under the silicon saturation vapor pressure and high-temperature vacuum conditions, the fitted vessel is further heated while maintaining a state where the internal pressure of the fitted vessel becomes higher than the external pressure, which generates an amorphous SiC layer 5b by making the carbonized layer 5a react to silicon. Further, by heating the single crystal SiC substrate accommodated in the fitted vessel in the same condition as the above, at least a part of the amorphous SiC on the sacrifice growth layer is recrystallized to generate a single crystal 4H-SiC layer 5c.;COPYRIGHT: (C)2009,JPO&INPIT