METHOD FOR MANUFACTURING SIC CRYSTAL TO REDUCE MICROPIPE PROPAGATING FROM SUBSTRATE AND SiC CRYSTAL, SiC SINGLE CRYSTAL FILM, SiC SEMICONDUCTOR ELEMENT, SiC SINGLE CRYSTAL SUBSTRATE AND ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SiC BULK CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a SiC crystal in which hollow-core defects that have propagated from a substrate can be reduced even when a SiC single crystal substrate having hollow-core defects called as micropipes is used.;SOLUTION: A source gas having a C/Si atom number ratio adjusted to a range in which the crystal growth rate is determined by the carbon atom supply limitation is brought into contact with a SiC substrate; and a plurality of SiC crystal layers are epitaxially grown into layers to dissociate the hollow-core defects in the SiC single crystal substrate into dislocations given by small Burgers vectors in order to prevent the defects from propagating to the crystal surface. A first SiC crystal is formed as a buffer layer, and further a SiC crystal is layered thereon by using a source gas having a C/Si ratio adjusted to be higher than that when forming the buffer layer.;COPYRIGHT: (C)2008,JPO&INPIT