Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling

摘要

Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.