A tunnel field-effect transistor with gated tunnel barrier

摘要

A tunnel Field effect transistor (TFET) is disclosed wherein the gate does not align with the drain, and only overlaps with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device.;In addition to the advantage of an improved switching speed, the proposed structure has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behaviour of the TFET is reduced).