Dopant-Segregated Metal Source Tunnel Field-Effect Transistors with Schottky Barrier and Band-to-Band Tunneling

摘要

Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.