A Novel Approach to Improve Uniformity of Cu CMP on Linear Polisher

摘要

A novel concept of belt tilting is proposed to better control Cu removal rate. The direction and degree of tilting, together with the effects of down force, air pressure, and speed of belt and wafer, has been investigated to achieve best removal uniformity on a linear polisher. Our simulation matches very well with experimental data and a highly manufacturable Cu CMP process is developed. In this work, the detailed correlation of these key process parameters and their impacts on removal rate will be presented.