CAPPING COMPOSITION FOR POST CU CMP(CHEMICAL MECHANICAL POLISHING) FOR FORMING AN UNIFORM CAPPING LAYER ON A CONDUCTIVE LAYER OF AN ELECTRIC DEVICE

摘要

PURPOSE: A capping composition for post CU CMP(chemical mechanical polishing) is provided to form a capping layer at room temperature without separate temperature increase.;CONSTITUTION: A capping composition for post CU CMP(chemical mechanical polishing) comprises 0.01-1 M of cobalt compound, 0.02-2 M of complexing agent, and 0.01-0.11 M of at least two kinds of reducing agents. A method for preparing copper wires comprises the steps of: performing chemical mechanical polishing of the copper surface in a copper wiring process; capping the chemical mechanical polished copper surface using the capping composition; and washing the copper surface with a washing solution.;COPYRIGHT KIPO 2011