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Method for achieving uniform CU CMP polishing

机译:实现均匀的cu CMP抛光的方法

摘要

A method for removing a metal oxide overlayer over a target polishing surface in conjunction with a chemical mechanical polishing (CMP) process to improve polishing uniformity including providing a substrate target polishing surface having a layer of an oxide of a metal overlying said metal to be chemically mechanically polished; removing the layer of an oxide of the metal using an oxide removal solution prior to performing a CMP process with an abrasive slurry; and, polishing the target polishing surface according to an a CMP process with an abrasive slurry including at least one of an oxidizer and a complexing agent.
机译:一种与化学机械抛光(CMP)工艺结合以去除目标抛光表面上的金属氧化物覆盖层以改善抛光均匀性的方法,该方法包括提供具有金属氧化物层的衬底目标抛光表面,所述金属氧化物层覆盖所述金属以进行化学处理机械抛光;在用研磨浆进行CMP工艺之前,使用氧化物去除溶液去除金属的氧化物层;根据本发明的实施方式的CMP方法,使用包含氧化剂和络合剂中的至少一种的研磨浆料来研磨目标研磨面。

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