A nanoscale ohmic contact for nanoelectronic devices

摘要

In this presentation, we report the development andncharacterization of low-resistance nanometer scale ohmic contacts whichnprovide suitable characteristics for application in nanoelectronicnsemiconductor devices. The nanocontact structure employs anheterostructure comparable to that used in previous large-area studiesnof a low resistance, non-alloyed ohmic contact, namely a thin (2-10 nm)ncap layer of low-temperature grown GaAs (LTG:GaAs) on a heavily dopednn-type GaAs layer