Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

摘要

Results are presented of an extended study on the induced lattice defects and their effects on the electrical performance of In0.53 Ga0.47As p-i-n photodiodes, subjected to a -MeV fast neutron irradiation. The degradatio of the electrical device performance increases with increasing neutron fluence. The lattice defects in teh In0.53Ga0.47As epitaxial layers before and after irradiation are studied by DLTS. While before irradiation, antive defects associated with Ga vacancies are observed, the irradiation introduces electron capture levels affected by idsplacement damage related local disordering and stoichiometry in the In0.53Ga0.47As epitaxial layer. The difference in radiation damage between 1-meV fast neutrons and 1-MeV electrons is discussed takig into account the number of knock-on atoms and the nonionizing energy loss (NIEL). The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.