Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

摘要

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.