Dramatic Improvement of Ge p-MOSFET Characteristics Realized by Amorphous Zr-Silicate/Ge Gate Stack with Excellent Structural Stability through Process Temperatures

摘要

Ge diffusion into high-k layer is completely suppressed by taking advantage of thermally stable Zr-silicate/Ge structure. This leads to high μ{sub}(h) of 210 cm{sup}2/Vsec at 0.1M V/cm, which is two times higher than that of ZrO{sub}2/Ge and even 23% higher than the value for Si universal curve. EOT scalability of Zr-silicate/Ge gate stacks is comparable to that of ZrO{sub}2/Ge one.