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Dramatic improvement of Ge p-MOSFET characteristics realized by amorphous zr-silicate/ge gate stack with excellent structural stability through process temperatures

机译：通过非晶Zr-硅酸盐/ Ge栅堆叠实现的Ge p-MOSFET特性的显着改善，在整个工艺温度下具有出色的结构稳定性

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《Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International》|2005年|P.429-432|共4页
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Kamata Y.; Kamimuta Y.; Ino T.; Iijima R.; Koyama M.; Nishiyama A.;
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1. Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with Hf_xZr_(1-x)O_2 and HfO_2/Metal Gate Stacks [J] . Szu-Han Ho, Ting-Chang Chang, Chi-Wei Wu ECS Journal of Solid State Science and Technology . 2013,第9期

机译：具有Hf_xZr_（1-x）O_2和HfO_2 /金属栅叠层的p-MOSFET在动态负偏置应力和负偏置温度不稳定性之后的异常栅极电流驼峰
2. A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/ Au/glass stack and electrical characterization [J] . Singh Ch Kishan, Amaladass E. P., Parida P. K., Applied Surface Science . 2021,第Mara1期

机译：通过Au诱导层交换过程在玻璃上的玻璃上的非常低的温度（170℃）结晶，AU诱导层面交换过程中的Au / Geox / Au /玻璃堆和电学特性
3. The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{rm DLIN}$ Technique [J] . Maheta V. D., Olsen C., Ahmed K., IEEE Transactions on Electron Devices . 2008,第7期

机译：氮氧化硅栅极介质中的氮工程对p-MOSFET的负偏压温度不稳定性的影响：超快速运行$ I_ {rm DLIN} $技术的研究
4. Dramatic Improvement of Ge p-MOSFET Characteristics Realized by Amorphous Zr-Silicate/Ge Gate Stack with Excellent Structural Stability through Process Temperatures [C] . Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, International Electron Devices Meeting . 2005

机译：通过工艺温度具有优异的结构稳定性，通过工艺稳定性实现GE P-MOSFET特性的巨大改善
5. Voltage and temperature dependent gate capacitance and current model for high-K gate dielectric stack [D] . Fan, Yang-Yu 2002

机译：高K栅极电介质堆叠的电压和温度相关的栅极电容和电流模型
6. Relationship between structural changes hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers [O] . Cesare Frigeri, Miklós Serényi, Nguyen Quoc Khánh, 2011

机译：超薄Si / Ge非晶层堆叠中结构变化氢含量与退火之间的关系
7. The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique [O] . MAHETA VD, OLSEN C, AHMED K, 2008

机译：氮氧氮化硅栅极电介质中的氮工程对p-MOSFET负偏压温度不稳定性的影响：超快速I-DLIN技术研究
8. Dramatically Improved Radiation Hardness for CMOS Silicon Gate Integrated Circuits Even Down to Cryogenic Temperatures [R] . Alter, M. 1987

机译：显着改善CmOs硅栅集成电路的辐射硬度，甚至低至低温

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