Electro-thermal modeling and measurements of SiGe HBTs

摘要

This paper deals with a comparison between electro-thermal nonlinear simulation and measurements performed on a Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs). The first part describes the simulation approach developed with ANSYS 3D Finite Element (FE) model. The second part describes the measurement process. This one is based on Low Frequency electrical impedance measurements generally achieved with S-parameters Vector Network Analyzer setup. Finally the FE model is compared to a Cauer circuit extracted to represent the measured data.