FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below

摘要

This simulation work studies whether optimal wafer and channel orientations exist that maximize the mobility of 10 nm-node strained-silicon FinFETs. For NFinFETs, strain-relaxed buffers or source/drain stressors yield the highest mobilities on rotated-notch wafers. For PFinFETs, industry-standard directions give the highest mobilities when using SiC strain-relaxed buffers as a stress booster. Using {110} substrates leads to strained mobilities that are in between what can be obtained by industry-standard and rotated-notch directions.