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Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers
Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers
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机译:使用表面/通道方向和应变覆盖层的FinFET的应力增强性能
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摘要
Different approaches for FinFET performance enhancement based on surface/channel direction and type of strained capping layer are provided. In one relatively simple and inexpensive approach providing a performance boost, a single surface/channel direction orientation and a single strained capping layer can be used for both n-channel FinFETs (nFinFETs) and p-channel FinFETs (pFinFETs). In another approach including more process steps (thereby increasing manufacturing cost) but providing a significantly higher performance boost, different surface/channel direction orientations and different strained capping layers can be used for nFinFETs and pFinFETs.
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