Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs

摘要

Recent developments in identification of as-grown defects and impurities in the GaN buffer region of AlGaN/GaN High Electron Mobility Transistors (HEMTs) provide an opportunity to identify their role in degradation of dynamic switching behavior. Using TCAD simulation, effect of capture-emission by electron and hole traps on drain current transients during drain lag switching experiments is presented which is otherwise difficult to predict analytically.