N-polar GaN基HEMT准二维电荷传输模型仿真

摘要

The quasi two-dimensional (quasi-2-D)charge transport model of N-polar GaN based HEMT was established,and DC characteristics were simulated by quasi-2-D model.Simulation results show that different polari-zation effect would produce different output characteristic curve and transfer characteristic curve.The threshold vol-tage was respectively -3.96 V,-2.29 V and -2.47 V,considering Psp+Ppe,only Ppe and only Psp,and the corre-sponding peak transconductance was respectively 44 mS/mm,41.2 mS/mm and 41.3 mS/mm.This model provides a theoretical reference for computational simulation of N-polar GaN based HEMT.%建立了氮极性(N-polar)GaN基HEMT器件的准二维(Quasi-2-D)电荷传输模型,仿真研究了N-polar GaN基HEMT的直流特性.仿真结果表明,不同的极化效应会对输出特性曲线和转移特性曲线产生不同的影响,考虑自发极化效应(Psp)+压电极化效应(Ppe)、只考虑Ppe和只考虑Psp三种情况下的阈值电压分别为:-3.96 V、-2.29 V和-2.47 V,而其对应的峰值跨导则分别为44 mS/mm、41.2 mS/mm和41.3 mS/mm.该模型为N-polar GaN基HEMT器件仿真提供了理论参考.