Method for the simulation of distributed effects in a device as a power semiconductor element

摘要

A method for simulating distributed effects within a device such as a power semiconductor device, more particularly a method for generating a simulation program for automatically simulating time dependent characteristics of a device to enable the operation of the device within a larger circuit to be simulated by a circuit simulator program which contains a computer model of the device to facilitate the designing of circuits incorporating such a device is described. In this method a computer system is used to solve a time dependent differential equation, for example the time dependent ambipolar diffusion equation for a semiconductor device, using boundary conditions which define the time dependent characteristics as evolving at a constant rate for a given time interval such that only a small number of transient terms are required for the solution and using the solution of the time dependent differential equation to modify the computer model of the device contained within the simulator program to enable the time dependent characteristics of the device to be simulated. Such a method enables the distributed effects of a device to be simulated in a circuit simulation.