Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation

摘要

Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3C-SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ～7 nm for on-axis and to ～5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ～18 μm for on-axis and ～12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.