Academic, Consortia, Intel-MET, & Strong Supplier Engagements Allow for World Class EUV Resist Work from First Principles to Patterning/Integration. New Intel Champion = Resist F & UL A & Ancillary Rinse 1 = 22 nm HP w/4.3 nm LWR, 0.10 urn DOF, E_(size) = 12.8 mJ/cm~2, and nZ_(22) = 15.7. Further characterization/optimization is ongoing. On-axis dipole capable of probing to 18 nm HP with certain resist platforms. 22 nm HP+ Patterning Requires Improvements to Realize RLS Solution: Positive-Tone: Polymer-Bound PAGs + Ancillaries Leading the Way... Multi-layer Stacks: Likely Required for Integrated RLS Solution.... Lead revolutionary CAR materials for 22 hp are molecular glass, chain scission, high absorbance resins, and negative-tone platforms.... Now Including Albany eMET in Planning/Execution of Cycles of Learning. Resist Out-gassing Must Remain High Priority to Meet HVM Targets. 15 nm HP Aerial Image Capability Needed Soon to Provide Ample Time for Material Readiness. Thin Film Effects are a Growing Concern Below 30 nm HP.
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