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Progress of Resist Materials and Process for hp 2x-nm Devices using EUV Lithography

机译:使用EUV光刻技术的hp 2x-nm设备的抗蚀剂材料和工艺的进展

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Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp 22 nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV lithography process. Then, we have begun a yield analysis of hp 2x nm test chips using the EUV1 (Nikon) full-field exposure tool. However, the resist performance does not yet meet the stringent requirements for resolution limit, sensitivity, and line width roughness. We reported on Selete standard resist 4 (SSR4) at the EUVL Symposium in 2009. Although it has better lithographic performance than SSR3 does, pattern collapse limits the resolution to hp 28 nm. To improve the resolution, we need to optimize the process so as to prevent pattern collapse. An evaluation of SSR4 for the hp 2x nm generation revealed that a thinner resist and the use of a tetrabutylammonium hydroxide (TBAH) solution for the developer were effective in mitigating this problem. Furthermore, the use of an underlayer and an alternative rinse solution increased the exposure latitude by preventing pattern collapse when the resist is overexposed. These optimizations improved the resolution limit to hp 22 nm.
机译:极紫外(EUV)光刻技术是在hp 22 nm技术节点及以后的半导体器件制造的领先候选人。 Selete计划涵盖了EUV光刻工艺的可制造性评估。然后,我们开始使用EUV1(尼康)全场曝光工具对hp 2x nm测试芯片进行产量分析。但是,抗蚀剂性能尚未满足对分辨率极限,灵敏度和线宽粗糙度的严格要求。我们在2009年的EUVL研讨会上报道了Selete标准抗蚀剂4(SSR4)。尽管它的光刻性能比SSR3好,但图案塌陷将分辨率限制在hp 28 nm。为了提高分辨率,我们需要优化流程以防止图案崩溃。对hp 2x nm世代的SSR4进行的评估表明,较薄的抗蚀剂和显影液使用氢氧化四丁铵(TBAH)溶液可有效缓解此问题。此外,使用底层和替代的冲洗溶液通过防止抗蚀剂过度曝光时的图案塌陷而增加了曝光范围。这些优化将分辨率极限提高到hp 22 nm。

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