We report a novel nonvolatile resistive switching memory with a Cu/Ta_2O_5/TiN structure. This memory device has low power (100 μA/1.5 V), large threshold voltage of 0.8V, moderate endurance of 102 cycles, and excellent retention with high resistance ratio of 2.4×10~2 after 10~5 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta_2O_5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.
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