SWITCHING DEVICE SWITCHING DEVICE ARRAY RESISTIVE RANDOM ACCESS MEMORY METHOD OF FABRICATING SWITCHING DEVICE SWITCHING DEVICE ARRAY AND RESISTIVE RANDOM ACCESS MEMORY

摘要

In a method for manufacturing a switching device according to an embodiment of the present invention, a first electrode material film and an insulating material film are sequentially formed on a substrate. A doping mask pattern layer is formed on the insulating material film, and the doping mask pattern layer exposes a part of a pillar structure forming region on the insulating material film. A dopant is implanted into the inside of the insulating material film exposed by the doping mask pattern layer. The doping mask pattern layer is removed. A second electrode material film is formed on the insulating material film. The second electrode material film, the insulating material film, and the first electrode material film are patterned on the substrate to form a pillar structure including a second electrode layer, an insulating layer, and a first electrode layer. At this time, a threshold switching operation is performed in a region doped with the dopant in the insulating layer. Accordingly, the present invention can control the size of a threshold switching operation region in the switching device.