Switching elements, resistive random access memory devices including the same, and methods of manufacturing the switching elements and the resistive random access memory devices

摘要

A method of manufacturing a switching element is provided. The method includes forming a pillar-shaped structure having a first electrode, an insulation layer and a second electrode which are stacked on a substrate. A tilted doping process is performed to inject dopants into at least a portion of the insulation layer. The tilted doping process forms a threshold switching operation region in the insulation layer.