Ensemble Monte Carlo/Molecular Dynamics Simulation of Electron Mobility in Silicon with Ordered Dopant Arrays

摘要

Electron transport in bulk silicon with ordered dopant arrays is studied using an ensemble Monte Carlo (EMC) technique coupled with molecular dynamics (MD) method. This work is motivated by a recently developed single-ion implantation (SII) technique, which enables us to fabricate a semiconductor device with an ordered dopant array. We numerically estimate the carrier mobility in silicon with such an ordered dopant array comparing to that with conventional random dopant distribution. The calculation results show that electron mobility can be enhanced in the ordered dopant array if the fluctuation of dopant position is less than 5 nm.