Simulation of inversion layer mobility roll-off by using molecular dynamics/ensemble Monte Carlo (MD/EMC) method

摘要

Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Carlo (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons aid negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD method. Furthermore, we calculate the inversion layer mobility in Si MOSFETs, and mobility roll-off near the threshold voltage is observed by the present approach.