H_2O VAPOR ASSISTED PLASMA CHEMISTRY FOR PHOTORESIST AND POLYMER REMOVAL OVER LOW-K MATERIALS

摘要

H_2O-vapor assisted plasma chemistry has been tested for process performance and analyzed with residual gas analysis (RGA) as well as optical emission spectroscopy (OES). It was found that the addition of H_2O vapor provides additional H_2 and enhances the consumption of molecular oxygen species. It provides a mode of neither "oxidizing" nor "reducing" plasma, but rather a "neutral" plasma chemistry condition, which is believed to be beneficial for successful polymer removal, while protecting the low-k material from damage.