Alternative plasma chemistry for enhanced photoresist removal

摘要

A CF.sub.4 /H.sub.2 O.sub.2 plasma is used to remove residues remaining after an ashing step. On a substrate, a layer of photoresist is formed over an underlying layer. The layer of photoresist is developed to form a photoresist pattern. The underlying layer is etched using the photoresist pattern. The substrate, including exposed areas of the underlying layer, are subjected to a plasma comprising H.sub.2 O.sub. 2 vapor and a gaseous fluorocarbon to remove residual polymers.