The damage production in the Si_9Ge_6 superlattices (SLs) upon implantation fo 150 keV Ar~+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction.It was found that the amorphization occurs in a narrow dose rnage of (1-2) x 10~14 cm~-2 via accumulation of point defects.The conclusion drawn earlier (Mater.Sci.Forum 248-249,289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed.Possible mechanisms of the layer interaction leading to the observed behavior are discussed.
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