Ion implantation in AlxGa1-xAs: damagestructures and amorphization mechanisms

摘要

We review previous research on ion implantation innAlxGa1-xAs-GaAs heterostructures, and includenobservations from our current work in order to assess the variousnmechanisms that have been proposed to account for damage accumulationnand amorphization in this system. In considering all of the experimentalnobservations, the most consistent description is one where amorphizationnoccurs by a combination of point-defect buildup and direct impactnamorphization mechanisms