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Method for performing a pre-amorphization implant (PAI) which provides reduced resist protect oxide damage and reduced junction leakage
Method for performing a pre-amorphization implant (PAI) which provides reduced resist protect oxide damage and reduced junction leakage
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机译:用于执行预非晶化注入(PAI)的方法,该方法可减少抗蚀剂保护氧化物的损坏并减少结泄漏
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摘要
The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.
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