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Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage

机译:降低大面积硅PIN微带传感器泄漏电流的研究-防止注入损伤的方法

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Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible.
机译:通过使用平面技术,已经制造了几个具有电容器耦合和多晶硅偏置电阻器的8 / spl次/ 4cm / sup 2 /单面硅微带传感器。 Sirtl蚀刻分析表明,漏电流是由注入损坏引起的。已经开发了硼固体源预沉积工艺来代替p / sup + /条带注入。已经研究了几种退火技术以去除植入物的损伤。原型传感器已在CERN SPS区域进行了测试。测试结果表明,这种传感器是可行的。

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