Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates

摘要

A method of fabricating a Si_1-XGe_X film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si_1-XGe_X layer on the silicon substrate forming a Si_1-XGe_X/Si interface there between; amorphizing the Si_1-XGe_X layer at a temperature greater than T_c to form an amorphous, graded SiGe layer; and annealing the structure at a temperature of between about 650° C. to 1100° C. for between about ten seconds and sixty minutes to recrystallize the SiGe layer.