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Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

机译：在硅（100）衬底上立方碳化碳铝铝膜的溅射：基板温度和沉积功率的影响

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A. Iqbal; G. Walker; L. Hold; A. Fernandes; A. Lacopi; F. Mohd-Yasin;
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1. Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power [J] . A. Iqbal, G.Walker, L. Hold, Journal of materials science . 2020,第1期

机译：在硅（100）衬底上的立方碳化硅上溅射氮化铝（002）膜：衬底温度和沉积功率的影响
2. Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature [J] . Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Japanese journal of applied physics . 2008,第5issue1期

机译：等离子体功率对低基底温度下超高频等离子体增强化学气相沉积法沉积氢化纳米晶立方碳化硅薄膜结构的影响
3. Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH_4/CH_4/H_2 at Various Substrate Temperatures [J] . Akimori Tabata, Yusuke Komura, Yoshiki Hoshide, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2008,第1Issue2期

机译：SiH_4 / CH_4 / H_2在不同衬底温度下通过热线化学气相沉积制备的纳米晶立方碳化硅薄膜的性能
4. HIGHLY CONDUCTIVE HYDROGENATED MICROCRYSTALLINE CUBIC SILICON CARBIDE FILMS DEPOSITED BY HOT WIRE CVD AT A LOW SUBSTRATE TEMPERATURE ON GLASS SUBSTRATES [C] . Shinsuke Miyajima, Akira Yamada, Makoto Konagai IEEE Photovoltaic Specialists Conference . 2005

机译：在玻璃基板上的低底板温度下，高导电氢化微晶立方碳化硅膜沉积在低底板温度下
5. Growth of gallium nitride and aluminum gallium nitride thin films using conventional and pendeo-expitaxial growth processes on hydrogen(6)-silicon carbide(0001) and silicon(111) substrates. [D] . Gehrke, Thomas. 2000

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6. Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures [O] . Fang-Hsing Wang, Cheng-Fu Yang, Yen-Hsien Lee 2014

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7. Structural characterization of aluminum films deposited on sputtered‐titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane [O] . Xiaodong Li, Byoung‐Youp Kim, Shi‐Woo Rhee 1995

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Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

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