METHOD FOR AMORPHIZATION RE-CRYSTALLIZATION OF SI1-XGEX FILMS ON SILICON SUBSTRATES

摘要

A method of fabricating a Si_1−XGe_X film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si_1−XGe_X layer on the silicon substrate forming a Si_1−XGe_X/Si interface there between; epitaxially growing a silicon cap on the Si_1−XGe_X layer; implanting hydrogen ions through the Si_1−XGe_X layer to a depth of between about 3 nm to 100 nm below the Si_1−XGe_X/Si interface; amorphizing the Si_1−XGe_X layer to form an amorphous, graded SiGe layer; and annealing the structure at a temperature of between about 650° C. to 1100° C. for between about ten seconds and sixty minutes to recrystallize the SiGe layer.